www.goodark.com page 1 of 6 rev.1.0 ssf 36 16 30v n-channel mosfet package marking and ordering information device marking device device package reel size tape width quantity ssf3616 ssf3616 sop-8 ?330mm 12mm 2500 units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 25 v i d 25 9 a i d 70 7 drain current-continuous@ current-pulsed (note 1) i dm 40 a maximum power dissipation p d 2.5 w operating junction and storage temperature range t j ,t stg -55 to 150 thermal characteristics thermal resistance,junction-to-ambient (note 2) r ja 62.5 /w electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250a 30 v general features v ds = 30v,i d =9a r ds(on) < 30m @ v gs =4.5v r ds(on) < 18.5m @ v gs =10v high power and current handing capability lead free product surface mount package description the ssf3616 uses advanced trench technology to provide excellent r ds(on) and low gate charge .this device is suitable for use as a load switch or in pwm applications. applications pwm applications load switch power management schematic d iagram marking and p in assignment s op - 8 t op v iew d g s
www.goodark.com page 2 of 6 rev.1.0 ssf 36 16 30v n-channel mosfet zero gate voltage drain current i dss v ds =30v,v gs =0v 1 a gate-body leakage current i gss v gs =20v,v ds =0v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250a 0.8 1.3 1.8 v v gs =4.5v, i d =7a 21 30 m drain-source on-state resistance r ds(on) v gs =10v, i d =9a 16 18.5 m forward transconductance g fs v ds =10v,i d =9a 10 s dynamic characteristics (note4) input capacitance c lss 600 pf output capacitance c oss 75 pf reverse transfer capacitance c rss v ds =15v,v gs =0v, f=1.0mhz 45 pf switching characteristics (note 4) turn-on delay time t d(on) 4 ns turn-on rise time t r 12 ns turn-off delay time t d(off) 22 ns turn-off fall time t f v ds =15v,v gs =10v,r gen =6 i d =1a 4 ns total gate charge q g 12 nc gate-source charge q gs 1.2 nc gate-drain charge q gd v ds =15v,i d =9a,v gs =10v 3.8 nc body diode reverse recovery time t rr 13 ns body diode reverse recovery charge q rr i f =9a, di/dt=100a/s 7 nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =3a 0.7 1.2 v notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on 1in 2 fr4 board, t 10 sec. 3. pulse test: pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to production testing.
www.goodark.com page 3 of 6 rev.1.0 ssf 36 16 30v n-channel mosfet typical electrical and thermal characteristics figure 3 power dissipation t j -junction temperature( ) p d power(w) i d - drain current (a) vds drain-source voltage (v) figu re 5 output characteristics vgs rgen vin g vdd rl vout s d figure 1:switching test circuit v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms figure 4 drain current i d - drain current (a t j -junction temperature( ) figure 6 drain-source on-resistance rdson on-resistance(m ) i d - drain current (a)
www.goodark.com page 4 of 6 rev.1.0 ssf 36 16 30v n-channel mosfet figure 8 drain - source on - resistance normalized on-resistance t j -junction temperature( ) vgs gate-source voltage (v) i d - drain current (a) figure 7 transfer characteristics vgs gate-source voltage (v) qg gate charge (nc) figure 11 gate charge c capacitance (pf) figure 10 capacitance vs vds vds drain-source voltage (v) figure 9 rdson vs vgs rdson on-resistance(m ) vgs gate-source voltage (v) figure 12 source - drain diode forward vsd source-drain voltage (v) i s - reverse drain current (a)
www.goodark.com page 5 of 6 rev.1.0 ssf 36 16 30v n-channel mosfet square wave pluse duration(sec) figure 14 normalized maximum transient thermal impedance z thja normalized transient thermal resistance figure 13 safe operation area i d - drain current (a) vds drain-source voltage (v)
www.goodark.com page 6 of 6 rev.1.0 ssf 36 16 30v n-channel mosfet sop-8 package information notes 1. dimensions are inclusive of plating 2. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 6 mils. 3. dimension l is measured in gauge plane. 4. controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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